MMDF2C03HDR2G parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Model:

MMDF2C03HDR2G

Description:

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

Stock:

27519

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.08

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Parameters

Current at 25 ° C - continuous drain (Id)

4.1A,3A

Drain source voltage (Vdss)

30V

FET Type

N and P Channel

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

16nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

630pF @ 24V

On resistance (maximum) for different Ids and Vgs

70 mΩ @ 3A,10V

Power - maximum

Vgs (th) (maximum) for different Ids

3V @ 250µA

packing

TR,CT,bulk

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载MMDF2C03HDR2G.pdf

MMDF2C03HDR2G（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory27519,Price reference "real-time change" China/Hongkong。 MMDF2C03HDR2G package/specs, Download MMDF2C03HDR2G、Datasheet。